Switching Diodes
Publication date: September 2006
SKF00070AED
1
This product complies with RoHS Directive (EU 2002/95/EC).
MAU2111
Silicon epitaxial planar type
For high speed switching circuits
Features
Optimum for high-density mounting
Short reverse recovery time t
rr
Small terminal capacitance C
t
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
80
V
Maximum peak reverse voltage
V
RM
80
V
Forward current
I
F
100
mA
Forward current (Average)
I
FM
225
mA
Non-repetitive peak forward surge current
*
I
FSM
500
mA
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
–55 to +150
°
C
Note) *: t = 1 s
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward current
V
F
I
F
= 100 mA
0.95
1.2
V
Reverse voltage
V
R
I
R
= 100
m
A
80
V
Reverse current
I
R
V
R
= 75 V
100
nA
Terminal capacitance
C
t
V
R
= 0, f = 1 MHz
0.6
2
pF
Reverse recovery time
*
t
rr
I
F
= 10 mA, V
R
= 6 V, I
rr
= 0.1 I
R
,
R
L
= 100
W
3.0
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
=
2
µ
s
t
r
=
0.35 ns
δ =
0.05
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Marking Symbol: 11
Unit: mm
1: Anode
2: Cathode
USSMini2-F1 Package
0.38
+0.02
−
0.03
0.13
+0.05
−
0.02
0.2
+0.05
−
0.02
0.60
±
0.05
0.8
5
±
0.05
0.075
±
0.05
1.
0
±
0.05
0.075
±
0.05
0 to 0.02
0.15 max.
5
°
5
°
2
1
