Zener Diodes
1
Publication date: August 2008
SKE00013FED
This product complies with the RoHS Directive (EU 2002/95/EC).
MAZTxxxH Series
Silicon planar type
For surge absorption circuit
■
Features
•
Two elements anode-common type
•
Power dissipation P
D
: 150 mW
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Power dissipation
*
P
D
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
■
Common Electrical Characteristics
T
a
= 25°C
±
3°C
Note) *: P
D
= 150 mW achieved with a printed circuit board.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Zener voltage
*
V
Z
I
Z
Specified value
V
Zener rise operating resistance
R
ZK
I
Z
Specified value
Ω
Zener operating resistance
R
Z
I
Z
Specified value
Ω
Reverse current
I
R
V
R
Specified value
µ
A
Refer to the list of the
electrical characteristics
within part numbers
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Electrostatic breakdown voltage:
±
10 kV
Test method: IEC1000-4-2 (C
=
150 pF, R
=
330
Ω
, Contact discharge: 10 times)
3. *: The temperature must be controlled 25°C for V
Z
mesurement.
V
Z
value measured at other temperature must be adjusted to V
Z
(25°C)
V
Z
guaranted 20 ms after current flow.
■
Package
•
Pin Name
SSMini3-F2
•
Pin Name
1: Cathode 1
2: Cathode 2
3: Anode
■
Marking Symbol
Refer to the list of the electrical characteristics
within part numbers
■
Internal Connection
1
3
2
