SHE00064AEK
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: October 2008
1
Photo IC
PNA4601M
Photodiode with Photodetection Function
For infrared remote control systems
Features
Extension distance: 8 m or more
External parts not required
Adoption of visible light cutoff resin
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Operating supply voltage
V
CC
– 0.5 to +7
V
Power dissipation
P
D
200
mW
Operating ambient temperature
T
opr
–20 to +75
°
C
Storage temperature
T
stg
–40 to +100
°
C
Soldering temperature
*
T
sol
260
°
C
Note) *: Less than 5 s
Electrical-Optical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Operating supply voltage
V
CC
4.7
5.0
5.3
V
Supply current
I
CC
No signal condition
1.8
2.4
3.0
mA
Maximum reception distance
*1
L
max
8.0
10.0
m
Low level output voltage
*2
V
OL
L
≤
8.0 m, I
OL
= 400
μ
A
0.35
0.5
V
High level output voltage
V
OH
No signal condition, I
OH
=
−
10
μ
A
4.75
4.80
V
Low level pulse width
*1
T
WL1
L = 8.0 m, 16 pulse
200
400
600
μ
s
T
WL2
L = 0.2 m, 16 pulse, T
a
= 65
°
C
±
3°
C
100
700
μ
s
High level pulse width
*1
T
WH
L = 8.0 m, 16 pulse
200
400
600
μ
s
Center frequency
f
O
36.7
kHz
Load resistance
R
L
15
20
25
k
W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *1: Burst wave form
fi
gure 1.
*2: Constant wave form Figure 2..
400
µ
s
400
µ
s
20 ms
Carrier frequency: f
O
Carrier frequency: f
O
Figure 2
Figure 1
