1
PIN Diodes
Publication date: September 2003
SKL00016AED
MA27P07
Silicon planar type
For high frequency switch
■
Features
•
Low terminal capacitance: C
t
≤
0.35 pF
•
Low forward dynamic resistance: r
f
≤
1.5
Ω
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
60
V
Forward current
I
F
100
mA
Power dissipation
P
D
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
10 mA
1.0
V
Reverse current
I
R
V
R
=
60 V
100
nA
Terminal capacitance
C
t
V
R
=
1 V, f
=
1 MHz
0.35
pF
Forward dynamic resistance
r
f
I
F
= 10 mA, f = 100 MHz
1.5
Ω
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
1: Anode
2: Cathode
SSSMini2-F2 Package
Unit: mm
5
°
5
°
0.27
1
2
1.40
±0.05
0.52
±0.03
1.00
±0.05
0.60
±0.05
0.15 min.
0 to 0.01
0.15 min.
0.15 max.
+0.05
–0.02
0.12
+0.05
–0.02
Marking Symbol: K
This product complies with the RoHS Directive (EU 2002/95/EC).
