2003 Sep 19
2
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
FEATURES
•
High power gain
•
Easy power control
•
Good thermal stability
•
Gold metallization ensures excellent reliability.
APPLICATIONS
•
Broadcast transmitters in the VHF frequency range.
DESCRIPTION
Dual push-pull silicon N-channel enhancement mode
vertical D-MOS transistor encapsulated in a 4-lead,
SOT262A1 balanced flange package with two ceramic
caps. The mounting flange provides the common source
connection for the transistors.
PINNING - SOT262A1
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A, and
SNW-FQ-302B.
PIN
DESCRIPTION
1
drain 1
2
drain 2
3
gate 1
4
gate 2
5
source
Fig.1 Simplified outline and symbol.
1
2
3
4
MAM098
Top view
5
5
d
g
s
d
g
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a push-pull common source test circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
η
D
(%)
CW, class-B
108
50
300
>20
>60
CW, class-C
108
50
300
typ. 18
typ. 80
CW, class-AB
225
50
250
>14
typ. 16
>50
typ. 55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
