Philips Semiconductors
Product specification
Logic level TOPFET
PIP3107-D
DESCRIPTION
QUICK REFERENCE DATA
Monolithic temperature and
SYMBOL
PARAMETER
MAX.
UNIT
overload protected logic level power
MOSFET in TOPFET2 technology
V
DS
Continuous drain source voltage
50
V
assembled in a 3 pin surface mount
I
D
Continuous drain current
16
A
plastic package.
P
D
Total power dissipation
65
W
T
j
Continuous junction temperature
150
˚C
APPLICATIONS
R
DS(ON)
Drain-source on-state resistance
50
m
Ω
General purpose switch for driving
I
ISL
Input supply current
V
IS
= 5 V
650
µ
A
lamps
motors
solenoids
heaters
FEATURES
FUNCTIONAL BLOCK DIAGRAM
TrenchMOS output stage
Current limiting
Overload protection
Overtemperature protection
Protection latched reset by input
5 V logic compatible input level
Control of output stage and
supply of overload protection
circuits derived from input
Low operating input current
permits direct drive by
micro-controller
ESD protection on all pins
Overvoltage clamping for turn
off of inductive loads
Fig.1. Elements of the TOPFET.
PINNING - SOT428
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
input
2
drain
3
source
tab
drain
DRAIN
SOURCE
INPUT
RIG
LOGIC AND
PROTECTION
O / V
CLAMP
POWER
MOSFET
1
2
3
tab
P
D
S
I
TOPFET
October 2001
1
Rev 1.000
