1998 Feb 16
28
Philips Semiconductors
Product specification
CMOS digital decoding IC with RAM for
Compact Disc
SAA7345
3-state outputs MISC, SCLK, WCLK, DATA and CL11
V
OL
LOW level output voltage
I
OL
= 1 mA
0
−
0.4
V
V
OH
HIGH level output voltage
I
OH
=
−
1 mA
V
DD
−
0.4
−
V
DD
V
C
L
load capacitance
−
−
50
pF
t
r
output rise time
C
L
= 20 pF; note 1
−
−
15
ns
t
f
output fall time
C
L
= 20 pF; note 1
−
−
15
ns
I
LI
3-state leakage current
V
I
= 0 to V
DD
−
10
−
+10
µ
A
3-state outputs MOTO1, MOTO2 and DOBM
V
OL
LOW level output voltage
V
DD
= 4.5 to 5.5 V;
I
OL
= 10 mA
0
−
1.0
V
V
DD
= 3.4 to 5.5 V;
I
OL
= 5 mA
0
−
1.0
V
V
OH
HIGH level output voltage
V
DD
= 4.5 to 5.5 V;
I
OH
=
−
10 mA
V
DD
−
1
−
V
DD
V
V
DD
= 3.4 to 5.5 V;
I
OH
=
−
5 mA
V
DD
−
1
−
V
DD
V
C
L
load capacitance
−
−
50
pF
t
r
output rise time
C
L
= 20 pF; note 1
−
−
10
ns
t
f
output fall time
C
L
= 20 pF; note 1
−
−
10
ns
I
LI
3-state leakage current
V
I
= 0 to V
DD
−
10
−
+10
µ
A
Digital input/output DA
V
IL
LOW level input voltage
−
0.3
−
0.3V
DD
V
V
IH
HIGH level input voltage
0.7V
DD
−
V
DD
+ 0.3
V
I
LI
3-state leakage current
V
I
= 0 to V
DD
−
10
−
+10
µ
A
C
I
input capacitance
−
−
10
pF
V
OL
LOW level output voltage
I
OL
= 1 mA
0
−
0.4
V
V
OH
HIGH level output voltage
I
OH
=
−
1 mA
V
DD
−
0.4
−
V
DD
V
C
L
load capacitance
−
−
50
pF
t
r
output rise time
C
L
= 20 pF; note 1
−
−
15
ns
t
f
output fall time
C
L
= 20 pF; note 1
−
−
15
ns
Crystal oscillator input CRIN (external clock)
g
m
mutual conductance at start-up
−
4
−
mS
R
O
output resistance at start-up
−
11
−
k
Ω
C
I
input capacitance
−
−
10
pF
I
LI
input leakage current
−
10
−
+10
µ
A
Crystal oscillator output CROUT (see Fig.26)
f
xtal
crystal frequency
8
16.9344
35
MHz
C
fb
feedback capacitance
−
−
5
pF
C
O
output capacitance
−
−
10
pF
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT