1999 Oct 12
17
Philips Semiconductors
Product specification
IC card interface
TDA8002C
CHARACTERISTICS
V
DD
= 3.3 V; T
amb
= 25
°
C; f
xtal
= 10 MHz; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
V
DD
supply voltage
3
−
6.5
V
I
DD(lp)
supply current
low-power mode
−
−
150
µ
A
I
DD(idle)
supply current
Idle mode; f
CLKOUT
= 10 MHz
−
−
5
mA
I
DD(active)
supply current
active mode; V
CC(O)
= 5 V;
f
CLKOUT
= 10 MHz
f
CLK
= LOW; I
CC
= 100
µ
A
−
−
8
mA
f
CLK
= 5 MHz; I
CC
= 10 mA
−
−
50
mA
f
CLK
= 5 MHz; I
CC
= 55 mA
−
−
140
mA
active mode; V
CC(O)
= 3 V;
f
CLKOUT
= 10 MHz
f
CLK
= LOW; I
CC
= 100
µ
A
−
−
8
mA
f
CLK
= 5 MHz; I
CC
= 10 mA
−
−
50
mA
f
CLK
= 5 MHz; I
CC
= 55 mA
−
−
140
mA
V
th2
threshold voltage on V
DD
for
voltage supervisor
falling
2.2
−
2.4
V
V
hys2
hysteresis on V
th2
50
100
150
mV
Card supply
V
CC(O)
output voltage
Idle mode
−
−
0.3
V
active mode
V
CC
= 5 V; I
CC
< 55 mA;
DC load
4.6
−
5.4
V
I
CC
= 40 nAs; AC load
4.6
−
5.4
V
V
CC
= 3 V; I
CC
< 55 mA;
DC load
2.76
−
3.24
V
I
CC
= 24 nAs; AC load
2.76
−
3.24
V
I
CC(O)
output current
V
CC(O)
= from 0 to 5 or 3 V
−
−
55
mA
V
CC
short-circuited to ground
−
200
−
mA
SR
slew rate
rising or falling slope
0.10
0.15
0.20
V/
µ
s
Crystal connections (XTAL1 and XTAL2)
C
ext
external capacitors
note 1
−
15
−
pF
f
xtal
resonance frequency
note 2
2
−
24
MHz
