LTE-A Module Series
EG12 Hardware Design
EG12_Hardware_Design 24 / 97
Vnorm=5.0V
USB_DM
33
IO
USB 2.0
differential data
bus (-)
Comply with USB
2.0 standard
specifications.
Require differential
impedance
of 90Ω.
USB_DP
34
IO
USB 2.0
differential data
bus (+)
USB_SS_ TX_M 37
AO
USB 3.0 super
speed
transmission (-)
Comply with USB
3.0 standard
specifications.
Require differential
impedance of 90Ω.
USB_SS_ TX_P
38
AO
USB 3.0 super
speed
transmission (+)
USB_SS_ RX_P
40
AI
USB 3.0 super
speed receiving
(+)
USB_SS_ RX_M 41
AI
USB 3.0 super
speed receiving (-)
USB_ID
36
DI
OTG identification
V
IL
min=-0.3V
V
IL
max=0.6V
V
IH
min=1.2V
V
IH
max=2.0V
1.8V power domain.
If unused, keep it
open.
OTG_PWR_
EN
143
DO
OTG power control
V
OL
max=0.45V
V
OH
min=1.35V
SDIO Interface*
Pin Name
Pin No.
I/O
Description
DC
Characteristics
Comment
SD_VDD
46
PO
SD card
application
: SDIO
pull up power
source
eMMC
application
: Keep
it open when used
for eMMC
For 1.8V SD
card:
Vmax=1.9V
Vmin=1.75V
For 3.0V SD
card:
Vmax=3.05V
Vmin=2.75V
I
O
max=50mA
Either 1.8V or 3.0V
is supported by the
module
automatically.
Power of SD card
must be provided by
an external power
supply.
SD_DATA0
49
IO
SDIO data signal
(bit 0)
For 1.8V SD
card:
V
OL
max=0.45V
V
OH
min=1.4V
V
IL
min=-0.3V
If unused, keep it
open.
SD_DATA1
50
IO
SDIO data signal
(bit 1)
If unused, keep it
open.
SD_DATA2
47
IO
SDIO data signal
If unused, keep it