SERVICE MANUAL
1.3 EEPROM AT24C04/ST24C04
1.3.1 Features
·Data EEPROM internally organized as 512 bytes and
32 pages×16 bytes
·Page protection mode, flexible page-by-page
hardware write protection
-Additional protection EEPROM of 32 bits, 1 bit per
data page
-Protection setting for each data page by writing its
protection bit
-Protection management without switching WP pin
·Low power CMOS
·Vcc=2.7 to 5.5V operation
·Two wire serial interface bus, I
2
C-Bus compatible
·Filtered inputs for noise suppression with Schmitt trigger
·Clock frequency up to 400 kHz
·High programming flexibility
Fig.9
-Internal programming voltage
-Self timed programming cycle including erase
-Byte-write and page-write programming, between 1 and 16 bytes
-Typical programming time 6 ms(<10ms) for up to 16 bytes
·High reliability
-Endurance 10
6
cycles
1)
-Data retention 40 years
1)
-ESD protection 4000 V on all pins
·8 pin DIP/DSO packages
·Available for extended temperature ranges
-Industrial: -40 to +85
-Automotive” -40 to +125
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Summary of Contents for MCR51R410
Page 15: ...14 STRUCTURE AND CHASSIS FUNCTION DESCRIPTION 1 Structure Block Diagram ...
Page 16: ...15 2 Block Diagram for Supply Voltage System ...
Page 17: ...16 3 System Control Block Diagram ...
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Page 39: ...Printed Circuit Board diagrams 1 ...
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