RF-WM-3220B1
Shenzhen RF-star Technology Co., Ltd.
Page 18 of 37
TX power level = 4
176
mA
54 OFDM
TX power level = 0
217
mA
TX power level = 4
154
mA
RX
1 DSSS
53
mA
54 OFDM
53
mA
NWP LPDX
(4)
0.25
mA
NWP idle connected
(3)
0.825
mA
MCU Shutdown
MCU shutdown
1
µA
MCU Hibernate
MCU hibernate
4.5
µA
Peak Calibration Current
(5)
V
BAT
= 3.6 V
420
mA
V
BAT
= 3.3 V
450
mA
Notes
:
(1) TX power level = 0 implies maximum power. TX power level = 4 implies output power backed off approximately 4
dB.
(2) The CC3220x system is a constant power-source system. The active current numbers scale based on the VBAT
voltage supplied.
(3) DTIM = 1
(4) LPDS current does not include the external serial flash. The LPDS number reported is with retention of 64 KB MCU
SRAM. The CC3220 device can be configured to retain 0 KB, 64 KB, 128 KB, 19 2KB or 256 KB SRAM in LPDS. Each
64 KB retained increases LPDS
current by 4 μA.
(5) The complete calibration can take up to 17 mJ of energy from the battery over a time of 24 ms. Calibration is
performed sparingly, typically when coming out of Hibernate and only if temperature has changed by more than 20°C or
the time elapsed from prior calibration is greater than 24 hours.
3.3.2 Current Consumption of RF-WM-3220B1
Table 7. Table of Current Consumption of RF-WM-3220B1
When measured on the RF-WM-3220B1 reference design with T
A
= 25
℃
, V
BAT
= 3.6 V with DC/DC enabled unless
otherwise noted.
Parameter
Test Conditions
(1) (2)
Min.
Typ.
Max.
Unit
MCU ACTIVE
NWP
TX
1 DSSS
TX power level = 0
286
mA