Circuit Description
Samsung Electronics
13-15
■
Mechanism of the FET Operation and High-Voltage Switching
Mechanism of the FET Operation
1) When the signal is output to the gate, (positive electric
potential) FET short circuits
(i.e. Conductor of resistance 0)
2) When no signal is output to the gate (GND), FET changes
to an open circuit (i.e. an insulator of resistance
∞
).
High-Voltage Switching of the FET Operation
1) When no signal is applied to G1, FET1 is
opened and when the signal is applied to G2,
FET2 short circuits, GND is output via the output
terminal.
2) When a signal is applied to G1, FET1 short cir
cuits and when no signal is applied to G2, FET2
is opened, and 180V is output via the output
terminal.
Summary of Contents for PS42D51SX/XEC
Page 9: ...1 6 Samsung Electronics MEMO ...
Page 24: ...Alignment Adjustment Samsung Electronics 3 9 ...
Page 32: ...Samsung Electronics 5 2 MEMO ...
Page 40: ...6 8 Samsung Electronics MEMO ...
Page 41: ...Block Diagram Samsung Electronics 7 1 7 Block Diagram 7 1 Overall Block Diagram ...
Page 43: ...Block Diagram Samsung Electronics 7 3 7 2 3 Logic Board Block Diagram ...
Page 45: ...Wiring Diagram Samsung Electronics 8 1 8 Wiring Diagram 8 1 Overall Wiring ...
Page 68: ...Operation Instruction Installation Samsung Electronics 11 3 11 1 3 Remote Control ...
Page 69: ...Operation Instruction Installation 11 4 Samsung Electronics ...
Page 77: ...11 12 Samsung Electronics MEMO ...
Page 85: ...12 8 Samsung Electronics MEMO ...
Page 111: ...13 26 Samsung Electronics MEMO ...