8-18
R530/R730
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
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Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
2/
2
1/
2
2
THIS DOCUMENT CONTAINS CONFIDENTIA
L
2
CHECK
ELECTRONICS
EXCEPT AS AUTHORIZED BY SAMSUNG
.
DRA
W
B
RE
V
PROPRIETARY INFORMATION THAT IS
4
SAMSUNG PROPRIETAR
Y
TITLE
DEV. STEP
PAGE
October 27, 2009 14:27:43 PM
1.0
PV
9/23/2008
HJ.KIM
YM.AHN
Jun PARK
DAT
E
APPROVAL
A
MODULE CODE
3
D
SAMSUNG ELECTRONICS CO’S PROPERTY.
1
1
Height : 4mm (Reverse
)
SAMSUN
G
C
D
A
Place near SO-DIMM
1
PART NO
.
4
C
DDR2 SO-DIMM #1
OF
3
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHER
S
B
LAST EDIT
Place one cap close to every 2 pull-up resistors terminated to P0.9V
C
94
1
10
V
2200nF-X5R
D:/users/mobile24/mentor/Bremen-L/PV/Bremen-L_MAI
N
SODIMM_DDR2 #2
SODIMM_DDR2
Bremen-
L
59
18
BA41-xxxxxA
10
0n
F
C937
10
V
R
78
2
56
7
10
0n
F
C965
10
V
nostuf
f
10
0n
F
C934
10
V
14-B1,18-D1
R
78
0
56
14-C1
7
6
14-D1,18-C1
39
6
56
R
80
2
10
V
2200nF-X5R
C921
14-B1,18-C1
4
56
R772
3
R
79
4
56
8
R774
56
4
14-D1,18-C1
26
56
R
79
8
56
R777
14-B1,18-C
4
P3.3V
R
79
7
56
63
nostuff
10
V
C936
10
0n
F
nostuf
f
10
V
C972
10
0n
F
24
nostuf
f
10
V
C944
2200nF-X5R
100nF
C
94
2
10V
C
93
3
100nF
10V
10
V
C971
10
0n
F
14
7
56
R
78
3
14-C1,18-C1
10
14-C1
5
14-D1,18-C1
R808
10
K
1%
14-C1,18-C1
R807
10
K
1%
R
79
9
56
2200nF-X5R
C920
10
V
14-B1,18-C1
58
2
7
P3.3V
9
8
1
2
3
47
7
1
3
5
6
56
R
78
1
2
40
56
R775
R
78
4
56
4
P1.8V_AUX
4
5
11
12
13
14-D1,18-C1
VSS4
9
12
VSS5
39
VSS5
0
149
VSS5
1
161
VSS5
2
VSS5
3
28
VSS5
4
40
VSS5
5
138
VSS5
6
150
VSS5
7
162
VSS6
48
184
VSS7
78
VSS8
71
VSS9
VSS34
17
8
VSS3
5
19
0
VSS36
9
VSS37
21
VSS3
8
33
VSS39
77
VSS4
15
5
VSS4
0
34
VSS4
1
13
2
VSS42
VSS4
3
14
4
15
6
VSS4
4
168
VSS4
5
2
VSS4
6
3
VSS4
7
15
VSS4
8
27
VSS2
42
VSS2
0
54
VSS21
59
VSS2
2
65
VSS2
3
60
VSS24
66
VSS2
5
12
7
VSS2
6
13
9
VSS27
12
8
VSS2
8
VSS2
9
14
5
18
3
VSS3
16
5
VSS30
17
1
VSS3
1
17
2
VSS3
2
17
7
VSS33
18
7
VDD
7
82
VDD
8
87
VDD
9
19
9
VDDSPD
VRE
F
1
47
VSS
1
72
VSS1
0
121
VSS1
1
122
VSS1
2
196
VSS1
3
VSS1
4
193
8
VSS1
5
18
VSS1
6
24
VSS17
41
VSS18
53
VSS1
9
13
3
20
1
GND1
20
2
83
NC
1
12
0
NC2
NC3
50
NC4
69
NCTEST
16
3
11
2
VDD
1
10
3
VDD10
88
VDD11
VDD12
10
4
11
1
VDD
2
11
7
VDD
3
96
VDD
4
95
VDD
5
11
8
VDD
6
81
R
79
6
56
3709-001572|sodimm-200p-r-1-1
DDR2-SODIMM-200P-RVS DDR2M1-
2
GND0
2
14-C1,18-C
4
27
22
51-B1
14-D1,17-C3
14-D1,18-C4
18
19
20
P1.8V_AUX
48
16
14-C1
13
C922
100nF
10
V
100nF
C919
12
31-B4
6
43
10
V
42
10
V
2200nF-X5R
C923
11-B4,17-B4
35
14
5
14-D1,18-B4
0
14-C1,18-C1
34
3
30
2.5V
AD
2200nF-X5R
C969
10
V
0
nostuff
220uF EC507
4
14-B1,18-D
4
23
14-D1,18-C1
R
78
5
56
53
1
17
3 2
56
R
79
2
R
79
3
56
45
46
14-A1
9
R773
56
0
37
100nF
C970
10
V
14-C1
14-C1
36
62
14-B1,18-C1
32
0
33
28
10
56
1
25
14-D1,18-B4
21
10
V
C973
10
0n
F
14-D1,18-C
4
5
50
10
V
C963
10
0n
F
C935
10
V
14-B1,18-C
4
6
10
0n
F
1
11
12
56
R
80
4
8
31-B4
11-B4,17-B4
41
14-C1
P0.9V
P0.9V
56
R
79
5
14-C1
S0
*
11
5
S1
*
SA
0
198
SA
1
200
SC
L
197
SD
A
195
109
WE*
1
14-B1,18-C
4
DQS*3
129
DQS*4
146
DQS*5
167
DQS*6
186
DQS*7
DQS
0
13
DQS1
31
DQS
2
51
DQS
3
70
DQS
4
131
DQS
5
148
DQS
6
169
DQS
7
188
ODT0
114
119
ODT1
108
RAS*
11
0
176
DQ56
179
DQ57
181
DQ58
189
DQ59
191
DQ6
14
DQ60
180
DQ61
182
DQ62
192
DQ63
194
DQ
7
16
DQ8
23
DQ9
25
11
DQS*0
29
DQS*1
49
DQS*2
68
141
DQ41
143
DQ42
151
DQ43
153
DQ44
140
DQ45
142
DQ46
152
DQ47
154
DQ48
157
DQ49
159
DQ5
6
DQ50
173
DQ51
175
DQ52
158
160
DQ53
DQ54
174
DQ55
73
DQ27
75
DQ28
62
DQ29
64
DQ3
19
DQ30
74
DQ3
1
76
DQ3
2
123
DQ33
125
DQ34
135
DQ35
137
DQ36
124
DQ37
126
DQ38
134
136
DQ39
DQ4
4
DQ40
37
DQ12
20
DQ13
22
DQ14
36
DQ15
38
DQ16
43
DQ17
45
DQ18
55
DQ19
57
DQ
2
17
DQ20
44
DQ21
46
DQ22
56
DQ23
58
61
DQ24
DQ25
63
DQ26
CK0
*
CK
1
16
4
16
6
C
K
1*
CKE
0
79
CKE1
80
DM
0
10
DM
1
26
DM
2
52
DM
3
67
DM4
130
DM
5
147
DM
6
170
DM7
185
DQ
0
5
7
DQ1
DQ10
35
DQ11
11
6
A1
4
86
A1
5
84
85
A16_BA
2
A2
10
0
A3
99
A4
98
A5
97
A6
94
A7
92
A8
93
A9
91
BA0
10
7
BA1
10
6
11
3
CAS*
CK
0
30
32
29
DDR2M1-
1
3709-001572|sodimm-200p-r-1-1
DDR2-SODIMM-200P-RVS
A0
10
2
A1
10
1
A10_AP
10
5
A1
1
90
89
A1
2
A1
3
60
4
14-D1,18-B
4
100nF
C967
10
V
38
57
14-D1,18-C4
54
14
56
R
80
0
52
nostuf
f
10
V
C940
10
0n
F
49
0
51
0
R
80
1
56
7
9
13
14-C1,18-B4
44
10
11
15
56
R779
56
R
80
3
R776
56
10
V
2200nF-X5R
C968
61
2
3
R778
56
31
5
6
59
nostuf
f
10
V
C938
10
0n
F
14-C1,18-C
4
10
V
C939
10
0n
F
14-D1,18-C1
nostuf
f
10
0n
F
C966
10
V
MEM1_BBS(0)
MEM1_BBS(1)
MEM1_BWE#
MEM1_BCAS
#
MEM1_BRAS
#
MEM1_BBS(2)
55
MEM1_CS2#
MEM1_CS3#
MEM1_CKE
2
MEM1_CKE
3
MEM1_ODT
2
MEM1_ODT
3
MEM1_VREF
MEM1_BBS(2)
MEM1_BMA(14:0
)
MEM1_BDQS(7:0)
MEM1_BWE
#
MEM1_BCAS
#
MEM1_BRAS#
SMB3_CL
K
SMB3_DATA
DDR2M_SA10_MN
DDR2M_SA11_M
N
MEM1_BDQ(63:0
)
MEM1_BMA(14:0
)
MEM1_BDQS#(7:0)
MEM1_CKE
2
MEM1_CKE
3
CLK1_MCLK2
CLK1_MCLK2
#
CLK1_MCLK3
CLK1_MCLK3
#
MEM1_BDM(7:0
)
MEM1_ODT2
MEM1_ODT3
MEM1_CS2#
MEM1_CS3#
MEM1_BBS(0)
MEM1_BBS(1)
Summary of Contents for R530
Page 5: ...iii Contents This Document can not be used without Samsung s authorization R530 R730...
Page 64: ...6 40 6 Material List This Document can not be used without Samsung s authorization R530 R730...
Page 240: ...4 23 4 Troubleshooting This Document can not be used without Samsung s authorization R530 R730...
Page 241: ...4 24 4 Troubleshooting This Document can not be used without Samsung s authorization R530 R730...
Page 249: ...4 32 4 Troubleshooting This Document can not be used without Samsung s authorization R530 R730...
