ELECTRICAL DATA
3C80A5B
13-
4
Table 13-3. Characteristics of Low Voltage Detect circuit
(T
A
= 25
°
C)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Hysteresys voltage of LVD
(Slew Rate of LVD)
∆
V
–
–
30
300
mV
Low level detect voltage (S3C80A5B)
V
LVD
–
2.0
2.20
2.40
V
Table 13-4. Data Retention Supply Voltage in Stop Mode
(T
A
= – 25
°
C to + 85
°
C)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Data retention supply
voltage
V
DDDR
–
1.0
–
5.5
V
Data retention supply
current
I
DDDR
V
DDDR
= 1.0 V
Stop mode
–
–
1
µA
Table 13-5. Input/output Capacitance
(T
A
= – 25
°
C to + 85
°
C, V
DD
=
0 V)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Input
capacitance
C
IN
f = 1 MHz; unmeasured pins
are connected to V
SS
–
–
10
pF
Output
capacitance
C
OUT
I/O capacitance
C
IO
Table 13-6. A.C. Electrical Characteristics
(T
A
= – 25
°
C to + 85
°
C)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Interrupt input,
High, Low width
t
INTH
,
t
INTL
P0.0–P0.7, V
DD
= 3.6 V
200
300
–
ns