12
Devices for Mobile Equipment
13
■
Devices for Motor
[MOSFETs Use Example]
Single-phase Motor (H-Bridge, Half pre.): #5
Single-phase Motor (H-Bridge): #6
Three-phase Motor: #7
M
Q1
Q2
Q4
Q3
Q6
Q5
Q1
Q2
Q4
Q3
Q1
Q2
LB11660V
Motor Driver
M
M
MOSFETs (Pch+Nch)
Type No.
Package
Polarity
Absolute maximum ratings/Ta=25
˚
C
Electrical characteristics/Ta=25
˚
C
Use
example
VDSS
[V]
VGSS
[V]
ID
[A]
PD
[W]
RDS (on) [
Ω
]
Ciss
[pF]
Qg
[nC]
VGS=10V
VGS=4(4.5)V
typ
max
typ
max
VEC2602
VEC8
Pch
30
20
3
0.9
0.065
0.086
0.117
0.168
510
11
#6
Nch
30
20
4
0.9
0.037
0.048
0.07
0.099
370
8.5
ECH8609
ECH8
Pch
30
20
4
1.3
0.05
0.067
0.087
0.12
550
2.2
#6, #7
Nch
30
20
6
1.3
0.025
0.034
0.052
0.075
510
11
FW340
SOP8
Pch
30
20
5
1.8
0.041
0.053
0.07
0.098
1000
16.5
Nch
30
20
5
1.8
0.037
0.048
0.064
0.09
460
8.6
FW377
Pch
35
20
5
1.8
0.037
0.049
0.062
0.087
1224
24
Nch
35
20
6
1.8
0.025
0.033
0.043
0.061
1050
20
FW356
Pch
60
20
3.5
2
0.11
0.145
0.15
0.21
990
22
#7
Nch
60
20
5
2
0.043
0.058
0.056
0.084
790
16
FW359
Pch
60
20
3
1.8
0.11
0.145
0.145
0.205
990
22
#6
Nch
60
20
3
1.8
0.11
0.145
0.15
0.215
300
7.8
FW360
Pch
100
20
2
1.4
0.24
0.315
0.32
0.45
935
20
#6, #7
Nch
100
20
2
1.4
0.175
0.22
0.22
0.31
530
13
MOSFETs
Type No.
Package
Polarity
Absolute maximum ratings/Ta=25
˚
C
Electrical characteristics/Ta=25
˚
C
Use
example
VDSS
[V]
VGSS
[V]
ID
[A]
PD
[W]
RDS (on) [
Ω
]
Ciss
[pF]
Qg
[nC]
VGS=10(15)V
VGS=4(4.5)V
typ
max
typ
max
2SJ646
TP
Pch
30
20
8
15
0.058
0.075
0.097
0.136
510
11
#6, #7
2SJ634
Pch
60
20
8
20
0.105
0.138
0.145
0.205
990
22
#7
2SJ637
Pch
100
20
5
20
0.24
0.312
0.32
0.45
935
20
2SK4067
TP
Nch
30
20
8
10
0.085
0.115
0.155
0.22
260
6
#6, #7
2SK3492
Nch
60
20
8
15
0.115
0.15
0.155
0.22
300
7.8
#7
2SK3617
Nch
100
20
6
15
0.18
0.225
0.225
0.315
530
13
MOSFETs
Type No.
Package
Polarity
Absolute maximum ratings/Ta=25
˚
C
Electrical characteristics/Ta=25
˚
C
Use
example
VDSS
[V]
VGSS
[V]
ID
[A]
PD
[W]
RDS (on) [
Ω
]
Ciss
[pF]
Qg
[nC]
VGS=10(15)V
VGS=4(4.5)V
typ
max
typ
max
MCH3410
MCPH3
Nch
30
20
2
0.9
0.115
0.15
0.19
0.27
120
3.6
#5
MCH3421
Nch
100
20
0.8
0.9
0.68
0.89
0.85
1.2
165
4.8
MCH6423
MCPH6
Nch
60
20
2
1.5
0.17
0.22
0.21
0.3
220
6.4
CPH3418
CPH3
Nch
30
20
1.4
0.9
0.23
0.3
0.4
0.56
65
2.5
CPH3424
Nch
60
20
1.8
1
0.17
0.22
0.21
0.3
220
6.4
CPH3427
Nch
100
20
1
1
0.48
0.63
0.58
0.81
240
6.5
VEC2402
VEC8
Nch+Nch
30
20
4
0.9
0.037
0.048
0.07
0.099
370
8.5
CPH6616
CPH6
Nch+Nch
30
20
2.5
0.9
0.079
0.105
0.15
0.21
187
5.2
Devices for Fan Motor
Bipolar Transistors
Type No.
Package
Polarity
Absolute maximum ratings/Ta=25
˚
C
Electrical characteristics/Ta=25
˚
C
Complementary
product
VCEO
[V]
IC
[A]
PC
[W]
hFE
VCE (sat) [V]
min
max
IC
[A]
IB
[mA]
typ
max
●
2SA2124
PCP
PNP
30
2
1.3 *
2
200
560
1.5
75
0.2
0.4
2SC6044
2SA2012
PNP
30
5
1.3 *
3
200
560
1.5
30
0.14
0.21
2SC5565
●
2SA2125
PNP
50
3
1.3 *
3
200
560
1
50
0.125
0.23
2SC5964
2SA2013
PNP
50
4
1.3 *
3
200
560
1
50
0.105
0.18
2SC5566
2SA1416
PNP
100
1
1.3 *
3
100
400
0.4
40
0.2
0.6
2SC3646
2SA1417
PNP
100
2
1.5 *
3
100
400
1
100
0.22
0.6
2SC3647
●
2SA2126
TP
PNP
50
3
15 *
1
200
560
1
50
0.135
0.27
-
2SA2039
PNP
50
5
15 *
1
200
560
1
50
0.115
0.195
2SC5706
2SA2040
PNP
50
8
15 *
1
200
560
3.5
175
0.23
0.39
2SC5707
●
2SA2169
PNP
50
10
20 *
1
200
560
5
250
0.29
0.58
2SC6017
2SA1592
PNP
100
1
10 *
1
100
400
0.4
40
0.2
0.6
2SC4134
2SA1593
PNP
100
2
15 *
1
100
400
1
100
0.22
0.6
2SC4135
2SA1552
PNP
160
1.5
1
100
400
0.5
50
0.2
0.5
2SC4027
●
2SC6044
PNP
NPN
30
2
1.3 *
2
200
560
1.5
75
0.17
0.26
2SA2124
2SC5565
NPN
30
5
1.3 *
3
200
560
1.5
30
0.125
0.19
2SA2012
●
2SC5964
NPN
50
3
1.3 *
3
200
560
1
50
0.1
0.15
2SA2125
2SC5566
NPN
50
4
1.3 *
3
200
560
1
50
0.085
0.13
2SA2013
2SC3646
NPN
100
1
1.3 *
3
100
400
0.4
40
0.1
0.4
2SA1416
2SC3647
NPN
100
2
1.5 *
3
100
400
1
100
0.13
0.4
2SA1417
2SC5706
TP
NPN
50
5
15 *
1
200
560
1
50
0.09
0.135
2SA2039
2SC5707
NPN
50
8
15 *
1
200
560
3.5
175
0.16
0.24
2SA2040
●
2SC6017
NPN
50
10
20 *
1
200
700
5
250
0.18
0.36
2SA2169
2SC4134
NPN
100
1
10 *
1
100
400
0.4
40
0.1
0.4
2SA1592
2SC4135
NPN
100
2
15 *
1
100
400
1
100
0.13
0.4
2SA1593
2SC4027
NPN
160
1.5
1
100
400
0.5
50
0.13
0.45
2SA1552
*1: Tc=25
˚
C *2: When mounted on ceramic substrate (450mm
2
×0.8mm) *3: When mounted on ceramic substrate (250mm
2
×0.8mm)
[Bipolar Transistor Use Example]
VCC
VIN
Hall element GND
GND
H
• For the purpose of power consumption reduction,
low saturated voltage transistor is recommended.
• PCP and TP packages with good radiation are
recommended.
• Composite type (B-E bias resistor, and C-E diode
are embedded) is recommended for miniaturization
purpose.
Bipolar Transistors: Built-in Damper Diode
Type No.
Package
Polarity
Absolute maximum ratings/Ta=25
˚
C
Electrical characteristics/Ta=25
˚
C
VCEO
[V]
IC
[A]
PC
[W]
hFE
VCE (sat) [V]
VF
IF=0.5A
[V]
RBE
(k
Ω
)
min
IC
[A]
IB
[mA]
typ
max
2SB1397
PNP
PNP
20
2
1.3 *
3
70
1
50
0.25
0.5
1.5
1.6
2SB1325
PNP
20
4
1.5 *
3
70
3
150
0.25
0.5
1.5
1.5
2SB1324
PNP
30
3
1.5 *
3
70
2
100
0.25
0.6
1.5
0.8
●
2SB1739
TP
PNP
30
3
1.5 *
3
70
2
100
0.28
0.6
1.5
0.8
2SD2100
PNP
NPN
20
2
1.3 *
3
70
1
50
0.25
0.5
1.5
1.6
2SD1999
NPN
20
4
1.5 *
3
70
3
150
0.25
0.5
1.5
1.5
2SD1998
NPN
30
3
1.5 *
3
70
2
100
0.2
0.5
1.5
0.8
●
2SD2720
TP
NPN
30
3
1.5 *
3
70
2
100
0.23
0.5
1.5
0.8
*1: Tc=25
˚
C *2: When mounted on ceramic substrate (450mm
2
×0.8mm) *3: When mounted on ceramic substrate (250mm
2
×0.8mm)
●
: New products
●
: New products
Summary of Contents for CPH5802
Page 1: ...Discrete Devices 2008 6 ...
