Copyright © Siemens AG 2016. All rights reserved
453
ERTEC 200P-2 Manual
Technical data subject to change
Version
1.0
t
RDY_ACTIV
E
Ready Active
Time
9.5 ns
ASYNC_BANKx.EW
t
RDY_DELAY
Ready Delay
Time
2 Tc + 2.6
ns
3 Tc + 10.1
ns
ASYNC_BANKx.EW
2)
t
RDY_DELAY
Ready Delay
Time
1 Tc + 2.6
ns
2 Tc + 10.1
ns
ASYNC_BANKx.EW
3)
t
ADB
Active data bus
8 ns
8 ns
EXTENDED_CONFIG.A
DB
t
RECOV
Recovery Phase 0 ns
120 ns
RECOV_CONFIG.REC
OVx
Based
on
Tc = 8 ns (AHB Clock = 125 MHz);
Load-value for Timing = 20pF
Buffer Driverstrength = 12mA
IO-Voltage = 1.8V
1)
BANK_0-4_CONFIG register
2)
in ASYNC_BANK0…4 register; Bit 31 – WSM = ‘0’
3)
in ASYNC_BANK0…4 register; Bit 31 – WSM = ‘1’
3.3.1.1.2 SRAM Timing for write access
Parame-
ter
Description
Min
Max
depends on Register
Note
t
W_SU
Write Setup-
Time
0 Tc – 1.3
ns
15 Tc + 5.1
ns
ASYNC_BANKx.W_SU
1)
t
W_STROBE
Write Strobe-
Time
1 Tc – 1.3
ns
64 Tc + 1.6
ns
ASYNC_BANKx.W_ST
ROBE
1)
t
W_HOLD
Write Hold-Time 1 Tc – 5.1
ns
8 Tc + 1.2
ns
ASYNC_BANKx.W_HO
LD
1)
t
RDY_ACTIV
E
Ready Active
Time
9.5 ns
ASYNC_BANKx.EW
t
RDY_DELAY
Ready Delay
Time
2 Tc + 6.2
ns
3 Tc + 10.4
ns
ASYNC_BANKx.EW
2)
