C8051T620/1/6/7 & C8051T320/1/2/3
38
Rev. 1.2
Table 7.6. EPROM Electrical Characteristics
Parameters
Test Condition
Min
Typ
Max
Unit
C8051T620/1 & C8051T320/1/2/3
16384
—
—
bytes
C8051T626
65535
—
—
bytes
C8051T627
32768
—
—
bytes
Write Cycle Time (per
Byte)
(Note 2)
105
155
205
µs
In-Application Program-
ming Write Cycle Time
(per Byte)
(Note 3)
Capacitor on V
PP
= 4.7 µF and fully
discharged
Capacitor on V
PP
= 4.7 µF and ini-
tially charged to 3.3 V
—
—
37
26
—
—
ms
ms
Programming Voltage
(V
PP
)
5.75
6.0
6.25
V
Capacitor on V
PP
for In-
application Programming
—
4.7
—
µF
Notes:
1.
512 bytes at location 0x3E00 to 0x3FFF are not available for program storage on the 16k devices, and 512
bytes at location 0xFE00 to 0xFFFF are not available for program storage on the C8051T626.
2.
For devices with a Date Code prior to 1040, the programming time over the C2 interface is twice as long. See
3.
Duration of write time is largely dependent on VIO voltage, supply voltage, and residual charge on the VPP
capacitor. The majority of the write time consists of charging the voltage on VPP to 6.0 V. These
measurements include the VPP ramp time and VDD = VIO = 3.3 V
Table 7.7. Internal High-Frequency Oscillator Electrical Characteristics
V
DD
= 2.7 to 3.6 V; T
A
= –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
Parameters
Test Condition
Min
Typ
Max
Unit
Oscillator Frequency
IFCN = 11b
47.28
48
48.72
MHz
Oscillator Supply Current
(from V
DD
)
25 °C, V
DD
= 3.0 V,
OSCICN.7 = 1,
OSCICN.5 = 0
C8051T626/7/T320/1/2/3
C8051T626/7
—
—
900
925
1000
1100
µA
µA
Power Supply Sensitivity
Constant Temperature
—
±0.02
—
%/V
Temperature Sensitivity
Constant Supply
—
±20
—
ppm/°C
Note:
Represents mean ±1 standard deviation.