Rev. 1.2
41
C8051T620/1/6/7 & C8051T320/1/2/3
Table 7.11. Temperature Sensor Electrical Characteristics
V
DD
= 3.0 V,
–
40 to +85 °C unless otherwise specified.
Parameters
Test Condition
Min
Typ
Max
Unit
Linearity
—
± 0.2
—
°C
Slope
C8051T626/7/T320/1/2/3
C8051T626/7
—
—
2.87
2.99
—
—
mV/°C
mV/°C
Slope Error*
—
337
—
µV/°C
Offset
Temp = 0 °C
C8051T626/7/T320/1/2/3
C8051T626/7
—
—
912
925
—
—
mV
mV
Offset Error*
Temp = 0 °C
—
± 11
—
mV
Note:
Represents one standard deviation from the mean.
Table 7.12. Voltage Reference Electrical Characteristics
V
DD
= 3.0 V; –40 to +85 °C unless otherwise specified.
Parameters
Test Condition
Min
Typ
Max
Unit
Internal Reference (REFBE = 1)
Output Voltage
1.2 V Setting, 25 °C ambient
2.4 V Setting, 25 °C ambient
1.1
2.3
1.2
2.4
1.3
2.5
V
VREF Short-Circuit Current
—
4.5
6
mA
VREF Temperature
Coefficient
—
±15
—
ppm/°C
Load Regulation
Load = 0 to 200 µA to GND, 1.2 V Setting
Load = 0 to 200 µA to GND, 2.4 V Setting
—
—
3.3
5.7
—
—
µV/µA
µV/µA
VREF Turn-on Time
(1.2 V setting)
4.7 µF tantalum, 0.1 µF ceramic bypass
—
1.2
—
ms
0.1 µF ceramic bypass
—
25
—
µs
VREF Turn-on Time
(2.4 V setting)
4.7 µF tantalum, 0.1 µF ceramic bypass
—
3.8
—
ms
0.1 µF ceramic bypass
—
90
—
µs
Power Supply Rejection
1.2 V Setting
—
160
—
µV/V
2.4 V Setting
—
330
—
µV/V
External Reference (REFBE = 0)
Input Voltage Range
0
—
V
DD
V
Input Current
Sample Rate = 500 ksps; VREF = 3.0 V
—
12
—
µA
Power Specifications
Reference Bias Generator
REFBE = 1 or TEMPE = 1
—
75
100
µA