S i M 3 U 1 x x
18
Preliminary Rev. 0.8
Table 3.7. Flash Memory
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Write Time
1
t
WRITE
One 16-bit Half Word
20
21
22
µs
Erase Time
1
t
ERASE
One Page
20
21
22
ms
t
ERALL
Full Device
20
21
22
ms
V
DD
Voltage During Programming
V
PROG
1.8
—
3.6
V
Endurance (Write/Erase Cycles)
N
WE
20k
TBD
—
Cycles
Retention
2
t
RET
T
A
= 85 °C, 1k Cycles
TBD
TBD
—
Years
Notes:
1.
Does not include sequencing time before and after the write/erase operation, which may be multiple AHB clock cycles.
2.
Additional Data Retention Information is published in the Quarterly Quality and Reliability Report.
Table 3.8. Internal Oscillators
Parameter
Symbol
Conditions
Min
Typ
Max
Units
USB Oscillator (USB0OSC)
Oscillator Frequency
f
USB0OSC
No Clock Recovery,
Full Temperature and
Supply Range
47.3
48
48.7
MHz
No Clock Recovery,
T
A
= 25 °C,
V
DD
= 3.3 V
47.8
48
48.2
MHz
USB Active with Clock
Recovery,
Full Temperature and
Supply Range
47.88
48
48.12
MHz
Power Supply Sensitivity
PSS
USB0OSC
T
A
= 25 °C
—
175
—
ppm/V
Temperature Sensitivity
TS
USB0OSC
V
DD
= 3.3 V
—
45
—
ppm/°C
Phase-Locked Loop (PLL0OSC)
Calibrated Output Frequency*
f
PLL0OSC
Full Temperature and
Supply Range
77
79
80
MHz
Power Supply Sensitivity*
PSS
PLL0OSC
T
A
= 25 °C,
Fout = 79 MHz
—
430
—
ppm/V
Temperature Sensitivity*
TS
PLL0OSC
V
DD
= 3.3 V,
Fout = 79 MHz
—
95
—
ppm/°C
Adjustable Output Frequency
Range
f
PLL0OSC
23
—
80
MHz