212
NVA100X-D - Manual - 02 - 2016
FUNCTION CHARACTERISTICS
Ground directional overcurrent (67N) - Fourth element logic diagram (IED>>>>) - Projecting operating mode (sheet 2 of 4)
67NS4-proiezione.ai
I
E 2
I
E 2
3 V
o
I
E 2
&
&
I
EDCLP>>>>def
sheet 3
P
A
&
State
I
E
∙cos
ϕ
≥
I
EDCLP>>>>def
I
E
∙cos
ϕ
≥ 0
I
ED>>>>def
Angle
Semisector
I
E
∙cos
ϕ
≥
I
ED>>>>def
O F F
O N
Insens-Zone
Φ
E
inside trip sector
I
E 2
Φ
E
inside trip sector
≥
1
A = ON - Change setting within CLP
A =“ON”
A =“OFF”
A = ON - Change setting within CLP
A =“ON”
A =“OFF”
3 V
o
I
E 2
I
E2
∙cos
ϕ
≥ 0
&
&
3 V
o
I
E 2
TRIP
3 V
o
I
E 2
TRIP
A = ON - Change setting within CLP
A =“ON”
CLP
A =“OFF”
I
E 2
Common configurations
Insens-Zone
O F F
O N
U
E
U
E C
3Votype67N
3 V
o
I
I ∙ c o s
Mode67N
≥
M∙threshold
M
Insens-Zone OFF
Insens-Zone ON
3 V
o
&
State
U
ED>>>>def
≥
M∙U
ED>>>>def
3 V
o
&
State
U
ED>>>>def
≥
U
ED>>>>def
3 V
o
&
State
U
ED>>>>def
≥
U
ED>>>>def
I
E
∙cos
ϕ
≥
M∙I
ED>>>>def
I
E 2
I
EDCLP>>>>def
A
&
State
I
E
∙cos
ϕ
≥
M∙I
EDCLP>>>>def
I
ED>>>>def
I
E2
∙cos
ϕ
≥
I
ED>>>>def
I
E 2
I
EDCLP>>>>def
A
&
State
I
E2
∙cos
ϕ
≥
I
EDCLP>>>>def
I
ED>>>>def
soglia
I
ED
I
E
Φ
E
o
Φ
EC
Angolo caratteristico
U
E
U
EC
Settore intervento
(direzione linea)
Settore non intervento
(direzione sbarre)
Semiasse caratteristico
Semiampiezza settore
angolare d’intervento
