1
Publication date: December 2002
SJC00287AED
Transistors
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
2SC5829
Silicon NPN epitaxial planar type
For high speed switching
■
Features
•
Allowing the small current and low voltage operation
•
High transition frequency f
T
•
Suitable for high-density mounting and downsizing of the equip-
ment for Ultraminiature leadless package
0.6 mm
×
1.0 mm (height 0.39 mm)
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
10 V, I
E
=
0
1
µ
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
=
1.5 V, I
C
=
0
1
µ
A
Forward current transfer ratio
h
FE
V
CE
=
1 V, I
C
=
1 mA
100
200
Transition frequency
f
T
V
CE
=
1 V, I
C
=
1 mA, f
=
0.8 GHz
4
GHz
Collector output capacitance
C
ob
V
CB
=
1 V, I
E
=
0, f
=
1 MHz
0.4
pF
(Common base, input open circuited)
Forward transfer gain
S
21e
2
V
CE
=
1 V, I
C
=
1 mA, f
=
0.8 GHz
6
dB
Maximum unilateral power gain
G
UM
V
CE
=
1 V, I
C
=
1 mA, f
=
0.8 GHz
15
dB
Noise figure
NF
V
CE
=
1 V, I
C
=
1 mA, f
=
0.8 GHz
3.5
dB
Unit: mm
Marking Symbol: X
0.60
±0.05
1.00
±0.05
2
1
3
0.39
+0.01
−
0.03
0.25
±0.05
0.25
±0.05
0.50
±0.05
0.65
±0.01
0.15
±0.05
2
1
0.35
±0.01
0.05
±0.03
0.05
±0.03
3
1: Base
2: Emitter
3: Collector
ML3-N2 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
10
V
Collector-emitter voltage (Base open)
V
CEO
7
V
Emitter-base voltage (Collector open)
V
EBO
2
V
Collector current
I
C
10
mA
Collector power dissipation
P
C
50
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
This product complies with the RoHS Directive (EU 2002/95/EC).
