Transistors
Publication date: June 2007
SJC00402AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC6036G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2162G
Features
Low collector-emitter saturation voltage V
CE(sat)
SSS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
15
V
Collector-emitter voltage (Base open)
V
CEO
12
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
500
mA
Peak collector current
I
CP
1
A
Collector power dissipation
P
C
100
mW
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
–55 to +125
°
C
Electrical Characteristics
T
a
= 25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10
m
A, I
E
= 0
15
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 1 mA, I
B
= 0
12
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10
m
A, I
C
= 0
5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 10 V, I
E
= 0
0.1
m
A
Forward current transfer ratio
h
FE
V
CE
= 2 V, I
C
= 10 mA
270
680
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 200 mA, I
B
= 10 mA
250
mV
Transition frequency
f
T
V
CB
= 2 V, I
E
= –10 mA, f = 200 MHz
–10 mA, f = 200 MHz
10 mA, f = 200 MHz
200
MHz
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
= 10 V, f = 1 MHz
4.5
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Package
Code
SSSMini3-F2
Marking Symbol: 4U
Pin Name
1: Base
2: Emitter
3: Collector
