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Transistors

1

Publication date: January 2003

SJC00196CED

2SD0814A 

(2SD814A)

Silicon NPN epitaxial planar type

For high breakdown voltage low-frequency and low-noise

amplification

Features

High collector-emitter voltage (Base open) V

CEO

Low noise voltage NV

Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.

Absolute Maximum Ratings  

T

a

 

=

 25

°

C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

185

V

Collector-emitter voltage (Base open)

V

CEO

185

V

Emitter-base voltage (Collector open)

V

EBO

5

V

Collector current

I

C

50

mA

Peak collector current

I

CP

100

mA

Collector power dissipation

P

C

200

mW

Junction temperature

T

j

150

°

C

Storage temperature

T

stg

55 to

 +

150

°

C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

V

CEO

I

C

 

=

 100 

µ

A, I

B

 

=

 0

185

V

Emitter-base voltage (Collector open)

V

EBO

I

E

 

=

 10 

µ

A, I

C

 

=

 

0

5

V

Collector-base cutoff current (Emitter open)

I

CBO

V

CB

 

=

 100 V, I

E

 

=

 

0

1

µ

A

Forward current transfer ratio 

*

h

FE

V

CE

 = 5 V, I

C

 = 10 mA

90

330

Collector-emitter saturation voltage

V

CE(sat)

I

C

 

=

 30 mA, I

B

 

=

 3 mA

1

V

Transition frequency

f

T

V

CB

 

=

 10 V, I

E

 

=

 

10 mA, f 

=

 200 MHz

150

MHz

Collector output capacitance

C

ob

V

CB

 

=

 10 V, I

E

 

=

 0, f 

=

 1 MHz

2.3

pF

(Common base, input open circuited)

Noise voltage

NV

V

CE

 = 10 V, I

C

 = 1 mA, G

V

 = 80 dB

150

mV

R

g

 = 100 k

, Function = FLAT

Electrical Characteristics  

T

a

 

=

 25

°

±

 3

°

C

Unit: mm

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

0.40

+0.10

–0.05

(0.65)

1.50

+0.25 –0.05

2.8

+0.2 –0.3

2

1

3

(0.95) (0.95)

1.9

±

0.1

2.90

+0.20

–0.05

0.16

+0.10

–0.06

0.4

±

0.2

10˚

0 to 0.1

1.1

+0.2 –0.1

1.1

+0.3 –0.1

1: Base
2: Emitter
3: Collector

EIAJ: SC-59

Mini3-G1 Package

Rank

Q

R

S

h

FE

90 to 155

130 to 220

185 to 330

Note) The part number in the parenthesis shows conventional part number.

Marking Symbol

 L

This product complies with the RoHS Directive (EU 2002/95/EC).

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