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Schottky Barrier Diodes (SBD)

1

Publication date: October 2007

SKH00215BED

This product complies with the RoHS Directive (EU 2002/95/EC).

MA3Z792DG, MA3Z792EG

Silicon epitaxial planar type

For super high speed switching

For small current rectification

Features

Two MA3Z7920G is contained in one package

Forward current (Average) I

F(AV)

 

=

 100 mA rectification is possible

Optimum for high frequency rectification because of its short
reverse recovery time t

rr

Low forward voltage V

F

 and good rectification efficiency

Absolute Maximum Ratings  

T

a

 

=

 

25

°

C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Forward voltage

V

F

I

F

 

=

 100 mA

0.55

V

Reverse current

I

R

V

R

 

=

 30 V

15

µ

A

Terminal capacitance

C

t

V

R

 

=

 0 V, f 

=

 1 MHz

20

pF

Reverse recovery time 

*

t

rr

I

F

 

=

 I

R

 

=

 100 mA

2

ns

I

rr

 

=

 10 mA, R

L

 

=

 100 

Electrical Characteristics

  T

a

 

=

 

25

°

±

 3

°

C

Parameter

Symbol

Rating

Unit

Reverse voltage

V

R

30

V

Repetitive peak reverse voltage

V

RRM

30

V

Forward current

Single

I

F

100

mA

Double 

*1

70

Peak forward

Single

I

FM

300

mA

current

Double 

*1

200

Non-repetitive peak forward

I

FSM

1

A

surge current 

*2

Junction temperature

T

j

125

°

C

Storage temperature

T

stg

55 to

 +

125

°

C

Bias Application Unit (N-50BU)

90%

Pulse Generator
(PG-10N)
R

s

 

50 

Wave Form Analyzer
(SAS-8130)
R

i

 

50 

t

p

 

µ

s

t

r

 

0.35 ns

δ = 

0.05

I

F

 

=

 100 mA

I

R

 

=

 100 mA

R

L

 

=

 100 

10%

Input Pulse

Output Pulse

I

rr

 

=

 10 mA

t

r

t

p

t

rr

V

R

I

F

t

t

A

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

3. Absolute frequency of input and output is 250 MHz.
4.*: t

rr

 measurement circuit

Note) *1: Value of each diode in double diodes used.

*2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)

Package

Code
SMini3-F2

Pin Name

MA3Z792DG

MA3Z792EG

1: Cathode 1

1: Anode 1

2: Cathode 2

2: Anode 2

3: Anode

3: Cathode

Marking Symbol

MA3Z792DG: M3Y

MA3Z792EG: M3Z

Internal Connection

1

2

3

1

2

3

D

E

Summary of Contents for Schottky Barrier Diodes MA3Z792DG

Page 1: ...current Single IF 100 mA Double 1 70 Peak forward Single IFM 300 mA current Double 1 200 Non repetitive peak forward IFSM 1 A surge current 2 Junction temperature Tj 125 C Storage temperature Tstg 55 to 125 C Bias Application Unit N 50BU 90 Pulse Generator PG 10N Rs 50 Ω Wave Form Analyzer SAS 8130 Ri 50 Ω tp 2 µs tr 0 35 ns δ 0 05 IF 100 mA IR 100 mA RL 100 Ω 10 Input Pulse Output Pulse Irr 10 mA...

Page 2: ...Reverse current I R µA Ta 125 C 75 C 25 C 10 1 40 0 40 80 120 160 200 1 10 102 103 104 Ambient temperature Ta C Reverse current I R µA VR 30 V 3 V 1 V 0 24 20 16 12 8 4 0 5 10 15 20 25 30 Reverse voltage VR V Terminal capacitance C t pF f 1 MHz Ta 25 C 0 0 2 0 4 0 6 0 8 1 0 40 0 40 80 120 160 200 Ambient temperature Ta C Forward voltage V F V IF 100 mA 10 mA 3 mA IF AV Ta 0 20 40 60 120 100 80 140...

Page 3: ... SKH00215BED This product complies with the RoHS Directive EU 2002 95 EC SMini3 F2 Unit mm 0 30 0 05 0 02 0 13 0 05 0 02 2 00 0 20 0 89 0 90 0 10 0 65 0 65 1 30 0 10 1 25 0 10 2 10 0 10 0 425 0 050 0 49 0 to 0 10 5 5 3 1 2 ...

Page 4: ...ard applications intended 4 The products and product specifications described in this book are subject to change without notice for modification and or im provement At the final stage of your design purchasing or use of the products therefore ask for the most up to date Product Standards in advance to make sure that the latest specifications satisfy your requirements 5 When designing your equipmen...

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