Section 3: Test subroutine library reference
S530 Parametric Test System Test Subroutine Library User's Manual
3-20
S530-907-01 Rev. A / September 2015
Example
result = bvdss1(d, g, s, sub, vdsmin, vdsmax, nstep, ipgm, udelay, type);
Schematic
S
bvebo
This subroutine measures emitter-base breakdown voltage at a specified current with the collector open.
Usage
double bvebo(int
e
, int
b
, int
c
, int
sub
, double
ipgm
, double
vlim
, char
type
);
e
Input
The emitter pin of the device
b
Input
The base pin of the device
c
Input
The collector pin of the device
sub
Input
The substrate pin of the device
ipgm
Input
The forced emitter-base current (I
EB
), in amperes
vlim
Input
The emitter voltage limit, in volts
type
Input
Type of transistor:
"N"
or
"P"
Returns
Output
Emitter-base voltage:
-1.0
= TYPE not "N" or "P"
+2.0E + 21
= Voltage limit reached; measured voltage is within
98 % of the specified voltage limit (
vlim
)
Details
This subroutine measures the emitter-base breakdown voltage by forcing an emitter current with the
collector pin open. Always call this subroutine last when testing transistors.
At high values of I
EBO
, degradation of the emitter-base junction can occur, which will lower beta (
).
If a positive substrate pin is specified, the substrate is grounded. If a positive substrate pin is not
specified, the substrate is left floating.
A delay is incorporated into the
bvebo
subroutine; this delay is the calculated time required for stable
forcing of
ipgm
within the
vlim
voltage limit.
V/I polarities
The polarity of
ipgm
is determined by the device type.
