S530 Parametric Test System Test Subroutine Library User's Manual
Section 3: Test subroutine library reference
S530-907-01 Rev. A / September 2015
3-67
Example
result = vgsat(d, g, s, sub, ipgm, vlim, vsub)
Schematic
vp
This subroutine estimates the voltage at which the current flow between the source and drain is blocked
("pinched-off") for a metal-semiconductor field-effect transistor (MESFET) at a specified drain voltage and fraction
of saturated drain current.
Usage
double vp(int
d
, int
g
, int
s
, int
sub
, double
vdss
, double
idlim
, double
factor
,
double
v1
, double
v2
, double
*idss
, double
*ip
, int
*iflag
)
d
Input
The drain pin of the device
g
Input
The gate pin of the device
s
Input
The source pin of the device
sub
Input
The substrate pin of the device
vdss
Input
The forced drain voltage, in volts
idlim
Input
Drain current limit, in amperes
factor
Input
Fraction of saturated drain current (I
DSS
)
v1
Input
Start of the gate-source voltage (V
GS
) search, in volts
v2
Input
End of the V
GS
search, in volts
idss
Output
Measured I
DSS
, in amperes
ip
Output
Targeted "pinch-off" current, in amperes
iflag
Output
Return status:
0 = Normal completion
1 = Device did not trigger
2 = IDSS is within 98 % of drain current limit
3 = <not used>
4 = The factor parameter is
0.0 or > 1
5 = Device triggered on starting voltage
6 = Device triggered on ending voltage
Returns
Output
The voltage at which the current flow between the source and drain is
blocked ("pinch-off" voltage)
