VersaGateway User’s Manual
Document #: 2015006.1.pdf
PAGE 30 of 44
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Device Features
EEPROM Memory (ON-CHIP)
The VersaGateway Devices support two types of on-board non-volatile memory: EEPROM and FRAM. The EEPROM memory is on-
chip (on-board the PLC on a Chip) while the FRAM is an independent device.
EEPROM memory is often useful for storing setpoint values into memory that will hold its value in the event of a loss of power.
EEPROM memory is a relatively slow writing device (in terms of milliseconds) and has limitations. This EEPROM memory is located
on the PLC on a Chip itself (PLCHIP-P13-51220).
EEPROM memory should not be used in applications where the values are updated (causing the stored value to update)
often; such as a process variable. While EEPROM memory has a long life, repeated writing (thousands of times) can cause
a memory location to fail. EEPROM memory is more oriented to be used for storage of menu changeable setpoints that
may change, but infrequently.
CONFIGURING THE ON CHIP EEPROM IN EZ LADDER TOOLKIT
Before the PLC on a Chip on-board EEPROM may be used in the ladder diagram, it must be added to the program’s target settings
using the EZ LADDER Toolkit’s Project Settings Menu.
1. In EZ LADDER, from the File Menu at the top, click
PROJECT
then
SETTINGS
. This will open the Project Settings Window.
Select
VersaGateway
as the target from the choices.
2. Click the
PROPERTIES
button to the right side of the window. The
VersaGateway’s Properties
Window will open. Make sure
the proper model is selected in the drop-down menu. If the EEPROM feature was already installed, it would be displayed in
the Devices Pane under the
Internal
heading (as PLCHIP_Pxx_eeprom). Refer to Figure 2-27.
3. Click the
ADD DEVICE
button. The
PLCHIP-PXX Devices
window will open. Locate the
PLCHIP_Pxx_eeprom
in the Devices pane
of this window.
4. Click the
PLCHIP_Pxx_eeprom
device (highlight). Refer to Figure 2-28.
Figure 2-27 - VersaGateway Properties
Figure 2-28 - PLCHIP-PXX Devices - EEPROM
5. Click
OK
. The
PLCHIP_Pxx_eeprom Properties
dialog will open. Leave the default settings (Num Retentive Bytes set to 0). See
Figure 2-29. Click
OK
.
The VersaGateway’s On-Chip EEPROM should not be used for Retentive Memory. All Retentive features should be
configured to use FRAM. Using on-chip EEPROM for retentive features will result in retentive data being lost.