VersaGateway User’s Manual
Document #: 2015006.1.pdf
PAGE 32 of 44
Divelbiss Corporation • 9778 Mt. Gilead Road • Fredericktown, Ohio 43019 • 1-800-245-2327 • www.divelbiss.com
Device Features
CONFIGURING RETENTIVE MEMORY IN EZ LADDER TOOLKIT
The retentive memory is installed automatically when the VersaGateway device is selected in the Project Settings. To adjust the
amount of retentive memory, it must be configured in the program’s target settings using the EZ LADDER Toolkit’s Project Settings
Menu.
1. In EZ LADDER, from the File Menu at the top, click
PROJECT
then
SETTINGS
. This will open the Project Settings Window.
Select
VersaGateway
as the target from the choices.
2. Click the
PROPERTIES
button to the right side of the window. The
VersaGateway Properties
Window will open. Make sure
the proper model is selected in the drop-down menu.
3. In the
Devices
Pane, select (highlight) the
FM24XXX
(from the I2C
heading
). Click the
PROPERTIES
button. The
Ramtron
FM24xxx Properties
dialog will open.
4. Enter the number of retentive bytes to use in the target in the
Num Retentive Bytes
box. The maximum available to use is 480
bytes (defaulted to 100 bytes). Refer to Figure 2-30. Any bytes not configured for retentive may be used as EEPROM memory
bytes. (displayed as Num User Bytes).
Do not select a different Part Number. Verify it is configured for FM24CL04 only.
5. Click
OK
to close the
FM24xxx Properties
dialog.
6. Click
OK
to close the
VersaGateway Properties.
7. Save your ladder diagram using the menu
FILE
and
SAVE
or
SAVE AS
to save the current settings in your program.
The Retentive memory size is now configured in the ladder diagram program and may be used by setting variables and functions as
retentive. Refer to the P-Series EZ LADDER Toolkit Manual for details on using retentive variables.
FRAM AS EEPROM IN EZ LADDER TOOLKIT
The FRAM may also be used in EZ LADDER Toolkit as EEPROM memory using the EEPROM_WRITE and EEPROM_READ function
blocks. Any memory not allocated as
retentive bytes
is available to be used as general EEPROM storage.
When using the EEPROM_READ or EEPROM_WRITE function blocks, the storage device is selected. When selected as
FRAM, the memory locations will not fail after repeated write cycles and therefore may be used to store any variables as
often as necessary. For more details on using FRAM and EEPROM (function blocks), refer to the P-Series EZ LADDER Toolkit
manual.
Figure 2-30 - Ramtron FM24xxx Properties