Model 4200A-SCS Parameter Analyzer Reference Manual
Appendix L: Wafer-level reliability testing
4200A-901-01 Rev. C / February 2017
L-11
V-ramp test: qbd_rmpv User Module
The V-ramp test uses the
qbd_rmpv
user module of the
wlrlib
user library.
Usage
See
(on page L-2), JESD35-A, "PROCEDURE FOR WAFER-LEVEL TESTING OF
THIN DIELECTRICS."
Some of the descriptions of the following variables are quoted from the JESD35-A standard. The
variables quoted from the standard include this reference identification: (Ref. JESD35-A).
status
= qbd_rmpv(int
hi_pin
, int
lo_pin1
, int
lo_pin2
, int
lo_pin3
, char
*
HiSMUId
, char *
LoSMUId1
, char *
LoSMUId2
, char *
LoSMUId3
, double
v_use
, double
I_init
, int
hold_time
, double
v_start
, double
v_step
, int
t_step
, int
measure_delay
, double
I_crit
, double
I_box
, double
I_max
, double
exit_curr_mult
,
double
exit_slope_mult
, double
q_max
, double
t_max
, double
v_max
, double
area
,
int
exit_mode
, double *
V_stress
, int
V_size
, double *
I_stress
, int
I_size
,
double *
T_stress
, int
T_size
, double *
q_stress
, int
q_size
, double *
I_use_pre
,
double *
I_use_post
, double *
Q_bd
, double *
q_bd
, double *
v_bd
, double *
I_bd
,
double *
t_bd
, double *
v_crit
, double *
v_box
, int *
failure_mode
, int
*
test_status
);
Input variables
status
Returned values are placed in the Analyze sheet
hi_pin
High pin (usually the gate pin) (-1 to 72); enter -1 to not connect
lo_pin1
lo_pin2
lo_pin3
Usually for source drain and substrate connection; depending on device structure,
some of those pins are optional; enter -1 to not connect
HiSMUId
ID string of the SMU outputting the stress
LoSMUId1
LoSMUId2
LoSMUId3
ID string of the SMU connected to ground terminal; these three IDs can be same
v_use
Oxide voltage (V) under normal operating conditions; typically the power supply
voltage of the process; this voltage is used to measure pre- and post-voltage ramp
oxide current (Ref. JESD35-A)
I_init
Oxide breakdown failure current when biased at
v_use
; see
Details
hold_time
Time in ms to hold the first stress (
v_start
)
v_start
Starting voltage (V) for voltage ramp; typical value is
v_use
(Ref. JESD35-A)
v_step
Voltage (V) ramp step height; maximum of 0.1 MV/cm; refer to
Details
t_step
Voltage ramp step time in ms, used to determine the voltage ramp rate; should be
less or equal than 100 ms (typically 40 ms to 100 ms)
measure_delay
Time delay in ms for measurement after each voltage stress step; should be less
than
t_step
(ms)